SiC MOSFET
|
Device |
Drain to Source Voltage,
|
Continuous Drain Current,
|
Case Temperature, T C (°C) |
Drain Source On Resistance,
|
Gate Charge,
|
Diode Reverse Recovery Time, t rr (ns) |
Configuration |
Package |
|
IQAA31SC120A1 |
1200 |
31 |
3.30 |
0.098 |
49.2 |
40 |
Single |
TO247-3L |
|
IQAA31SC120D1 |
1200 |
31 |
1.70 |
0.098 |
49.2 |
27 |
Single |
TO247-3L |
|
IQAA40SC120B1 |
1200 |
40 |
3.30 |
0.049 |
98.4 |
40 |
Parallel |
TO247-3L |
|
IQAA40SC120D1 |
1200 |
40 |
1.70 |
0.049 |
98.4 |
27 |
Copack w/ SiC Diode |
TO247-3L |
|
IQIA68SC120B3 |
1200 |
68 |
3.30 |
0.025 |
196.8 |
40 |
Parallel |
SOT227 |
|
IQIA68SC120D3 |
1200 |
68 |
1.67 |
0.025 |
196.8 |
27 |
Copack w/ SiC Diode |
SOT227 |