MOSFET
New generation high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction losses, provide superior switching performance and withstand extreme dv/dt rate and higher avalache energy.
MOSFET is a common type of transistor and is widely used for high-speed switching applications and integrated circuits. IQXPRZ offers 600V to 900V MOSFET in Discretes (TO-247, T0-264 and SOT-227).
Typical Applications
- Power Supplies
- Switch Mode Power Supply
- PC Silver Box
- Solar Inverter
- Welding Inverter
- Induction Heating
- Electronic Ballast
|
Device |
Drain to Source
Voltage,
|
Continuous Drain
Current,
|
Case Temperature, T C (°C) |
Drain Source On
Resistance,
|
Gate Charge,
|
Diode Reverse Recovery Time, t rr (ns) |
Configuration |
Package |
|
600 |
39 |
25 |
0.07 |
252 |
482 |
Single |
SOT227 |
|
|
600 |
56 |
25 |
0.05 |
120 |
585 |
Parallel |
SOT227 |
|
|
600 |
62 |
25 |
0.05 |
120 |
585 |
Parallel |
TO247-EXT |
|
|
600 |
78 |
25 |
0.035 |
504 |
482 |
Parallel |
SOT227 |
|
|
600 |
75 |
25 |
0.035 |
252 |
580 |
Parallel |
TO247-3L |
|
|
800 |
15 |
25 |
0.25 |
88 |
484 |
Single |
SOT227 |
|
|
800 |
15 |
25 |
0.25 |
88 |
484 |
Single |
SOT227-VL |
|
|
800 |
30 |
25 |
0.125 |
176 |
484 |
Parallel |
SOT227 |
|
|
800 |
34 |
25 |
0.125 |
176 |
484 |
Parallel |
TO247-3L |
|
|
800 |
60 |
25 |
0.063 |
352 |
484 |
Parallel |
SOT227 |
|
|
900 |
31 |
25 |
0.1 |
270 |
920 |
Single |
SOT227 |
|
|
900 |
72 |
25 |
0.05 |
540 |
920 |
Parallel |
TO264 |
|
|
900 |
62 |
25 |
0.05 |
540 |
920 |
Parallel |
SOT227 |
|
Device |
Drain to Source
Voltage,
|
Continuous Drain
Current,
|
Case Temperature, T C (°C) |
Drain Source On
Resistance,
|
Gate Charge,
|
Diode Reverse Recovery Time, t rr (ns) |
Configuration |
Package |
|
IQAA62SC120B1 |
1200 |
62 |
25 |
0.049 |
21.6 |
40 |
Single |
TO247-3L |
|
IQIA104SC120B3 |
1200 |
104 |
25 |
0.025 |
44.0 |
40 |
Single |
SOT227 |
|
Device |
Drain to Source
Voltage,
|
Continuous Drain
Current,
|
Case Temperature, T C (°C) |
Drain Source On
Resistance,
|
Gate Charge,
|
Diode Reverse Recovery Time, t rr (ns) |
Configuration |
Package |
|
IQAA31SC120A1 |
1200 |
31 |
3.30 |
0.098 |
49.2 |
40 |
Single |
TO247-3L |
|
IQAA31SC120D1 |
1200 |
31 |
1.70 |
0.098 |
49.2 |
27 |
Single |
TO247-3L |
|
IQAA40SC120B1 |
1200 |
40 |
3.30 |
0.049 |
98.4 |
40 |
Parallel |
TO247-3L |
|
IQAA40SC120D1 |
1200 |
40 |
1.70 |
0.049 |
98.4 |
27 |
Copack w/ SiC Diode |
TO247-3L |
|
IQIA68SC120B3 |
1200 |
68 |
3.30 |
0.025 |
196.8 |
40 |
Parallel |
SOT227 |
|
IQIA68SC120D3 |
1200 |
68 |
1.67 |
0.025 |
196.8 |
27 |
Copack w/ SiC Diode |
|