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Device	Repetitive Peak Reverse Voltage, V RRM (V)	Continuous Forward Current, I F (A)	Case Temperature, T C (°C)	Forward Voltage Drop, V F (V) @Rated I F	Reverse Recovery Time, t rr (ns)	@ Rated I F	@ Rated I F	Configuration	Package
						@-di/dt (A/µs)	@VR (V)
IQBD30D60A1	600	30	90	1.50	126	1000	400	Single	B
IQB1D30D60A1	600	30	90	1.50	126	1000	400	Single	B1
IQAD30D60B1	600	2X30	90	1.50	126	1000	400	Common cathode	A
IQID2X30D60B3	600	2X30	85	1.50	126	1000	400	Parallel	I
IQID2X30D60C3	600	2X30	85	1.50	126	1000	400	Anti-parallel	I
IQAD30D60I3	600	30	85	1.80	126	1000	400	Half bridge	A
IQID30D60I3	600	30	85	1.50	126	1000	400	Half bridge	I
IQCD30D60J3	600	30	85	1.50	126	1000	400	Full bridge	C
IQB1D50D60A1	600	50	85	1.55	58	2800	300	Single	B1
IQB1D75D60A1	600	75	100	1.65	121	1460	400	Single	B1
IQID75D60A3	600	75	77	1.65	121	1460	400	Single	I
IQID2X75D60B3	600	2X75	77	1.65	121	1460	400	Parallel	I
IQID2X75D60C3	600	2X75	77	1.65	121	1460	400	Anti-parallel	I
IQID100D60A3	600	100	80	1.6	70	1300	400	Single	I
IQID2X100D60B3	600	2X100	80	1.6	70	1300	400	Parallel	I
IQID2X100D60C3	600	2X100	80	1.6	70	1300	400	Anti-parallel	I
IQBD15D120A1	1200	15	90	2.00	65	600	600	Single	B
IQB1D15D120A1	1200	15	90	2.00	65	600	600	Single	B1
IQED15D120A1	1200	15	90	2.00	65	600	600	Single	E
IQAD15D120B1	1200	2X15	90	1.60	65	600	600	Common cathode	A
IQBD15D120A1A	1200	15	100	1.7	210	200	600	Single	B
IQB1D15D120A1A	1200	15	100	1.7	210	200	600	Single	B1
IQBD50D120A1	1200	50	95	1.8	250	1000	600	Single	B
IQB1D50D120A1	1200	50	95	1.8	250	1000	600	Single	B1
IQED50D120A1	1200	50	95	1.8	250	1000	600	Single	E
IQED75D120A1	1200	75	100	1.8	250	1600	600	Single	E
IQID2X50D120B3	1200	2X50	80	1.7	250	1000	600	Parallel	I
IQID2X50D120C3	1200	2X50	80	1.7	250	1000	600	Anti-parallel	I
IQID2X100D120B3	1200	2X100	80	1.8	325	1000	600	Parallel	I
IQID2X100D120C3	1200	2X100	80	1.8	325	1000	600	Anti-parallel	I

igbt

mosfet

modules

diode

scr / tHYRISTOR

silicon carbide (sic)

SWITCHING