SIC MOSFET
Device | Drain to Source Voltage, VDSS (V) |
Continuous Drain Current, ID (A) |
Case Temperature, TC(°C) | Drain Source On Resistance, RDS(on)max (Ω) |
Gate Charge, QG (nC) |
Diode Reverse Recovery Time, trr (ns) | Configuration | Package |
IQAA31SC120A1 | 1200 | 31 | 3.30 | 0.098 | 49.2 | 40 | Single | TO247-3L |
IQAA31SC120D1 | 1200 | 0.098 | 49.2 | 27 | Single | TO247-3L | ||
IQAA40SC120B1 | 1200 | 40 | 3.30 | 0.049 | 98.4 | 40 | Parallel | TO247-3L |
IQAA40SC120D1 | 1200 | 40 | 1.70 | 0.049 | 98.4 | 27 | Copack w/ SiC Diode | TO247-3L |
IQIA68SC120B3 | 1200 | 68 | 3.30 | 0.025 | 196.8 | 40 | Parallel | SOT227 |
IQIA68SC120D3 | 1200 | 68 | 1.67 | 0.025 | 196.8 | 27 | Copack w/ SiC Diode | SOT227 |